US Patent Issued to Navitas Semiconductor on Oct. 6 for "Half-bridge circuit using monolithic flip-chip GAN power devices" (California, Texas Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,756,203, issued on Oct. 6, was assigned to Navitas Semiconductor Ltd. (Dublin).

"Half-bridge circuit using monolithic flip-chip GAN power devices" was invented by Daniel M. Kinzer (El Segundo, Calif.), Santosh Sharma (Austin, Texas) and Ju Jason Zhang (Monterey Park, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuit...