US Patent Issued to NATIONAL YANG MING CHIAO TUNG UNIVERSITY on Sept. 1 for "Fabrication method for increasing bottom gate oxide thickness of a power transistor and trench gate structure formed by using the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,232, issued on Sept. 1, was assigned to NATIONAL YANG MING CHIAO TUNG UNIVERSITY (Hsinchu City, Taiwan).

"Fabrication method for increasing bottom gate oxide thickness of a power transistor and trench gate structure formed by using the same" was invented by Bing-Yue Tsui (Hsinchu City, Taiwan) and Li-Tien Hsueh (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fabrication method for increasing bottom gate oxide thickness of a power transistor and trench gate structure formed by using the same are provided. A power transistor is provided, and a gate oxide layer is deposited along its trench. Two polysilicon sidewalls are formed an...