US Patent Issued to NATIONAL YANG MING CHIAO TUNG UNIVERSITY on Nov. 3 for "High electron mobility transistor and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,330, issued on Nov. 3, was assigned to NATIONAL YANG MING CHIAO TUNG UNIVERSITY (Hsinchu City, Taiwan).

"High electron mobility transistor and method for manufacturing the same" was invented by Edward Yi Chang (Hsinchu City, Taiwan), Yueh-Chin Lin (Hsinchu City, Taiwan), He-Yu Yang (Hsinchu City, Taiwan) and Howie Tseng (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a high electron mobility transistor (HEMT), which comprises the following steps: providing a substrate, wherein a semiconductor layer is formed on the substrate, and a source electrode and a drain electrode are formed on the semiconductor l...