US Patent Issued to NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY on Sept. 1 for "Magnetic storage device provided with magnetoresistive element" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,632, issued on Sept. 1, was assigned to NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Tokyo).

"Magnetic storage device provided with magnetoresistive element" was invented by Rie Matsumoto (Tsukuba, Japan), Shinji Yuasa (Tsukuba, Japan) and Hiroshi Imamura (Tsukuba, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a magnetic storage device 10 comprising: a magnetoresistive element 11 having a structure in which a recording layer 13 that includes a first magnetic layer, a tunnel barrier layer 14, and a reference layer 15 that includes a second magnetic layer are laminated; and a control unit 12, wherein the in-plan...