US Patent Issued to NANYA TECHNOLOGY on Sept. 1 for "Semiconductor device and method of manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,452, issued on Sept. 1, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor device and method of manufacturing the same" was invented by Jen-I Lai (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of manufacturing a semiconductor device. The method includes: providing a semiconductor structure, in which the semiconductor structure comprises a silicon substrate having a plurality of trenches and an oxide material filled in the trenches and covering the silicon substrate, and the trenches define a plurality of island structures; forming a pad oxide layer on a top ...