US Patent Issued to NANYA TECHNOLOGY on Oct. 6 for "Semiconductor memory device manufacturing method" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,699, issued on Oct. 6, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor memory device manufacturing method" was invented by Chin-Chung Ke (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device manufacturing method includes the following steps. A word line trench is formed in an active area of a substrate. An oxide liner is formed in the word line trench such that the word line trench has a first width at a first opening of the word line trench after forming the oxide liner. A word line metal is formed in the word line trench. A nitride layer is formed over the active area ...