US Patent Issued to NANYA TECHNOLOGY on Oct. 6 for "Semiconductor device with slanted conductive layers and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,783, issued on Oct. 6, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor device with slanted conductive layers and method for fabricating the same" was invented by Kuo-Hui Su (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device including a first die and a second die. The first die includes a first dielectric layer disposed over a first substrate, a second dielectric layer disposed over the first dielectric layer, a first metal layer disposed in the first dielectric layer, and a first conductive via disposed in the second dielectric layer. The first ...