US Patent Issued to NANYA TECHNOLOGY on Oct. 6 for "Semiconductor device with composite dielectric and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,725, issued on Oct. 6, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor device with composite dielectric and method for fabricating the same" was invented by Yuan-Yuan Lin (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first interconnect structure disposed in a semiconductor substrate, first and second dielectric layers disposed over the semiconductor substrate, a second interconnect structure disposed in the first and second dielectric layers, and ...