ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,636, issued on Oct. 27, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).
"Semiconductor device and manufacture method thereof" was invented by Szu Yu Hou (New Taipei City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device is provided, including: providing a substrate, including an unit area and a peripheral area; forming a cell contact, a bit line structure and a spacer on the unit area, in which the spacer separates the cell contact and the bit line structure, forming a doped polysilicon layer on the cell contact, thereby forming a cell contact structure including the doped polys...