US Patent Issued to NANYA TECHNOLOGY on Oct. 27 for "Method of manufacturing semiconductor device" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,854, issued on Oct. 27, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Method of manufacturing semiconductor device" was invented by Yubon Chiang (Kaohsiung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes providing a bit line structure on a substrate, and the bit line structure is located between a pair of spacers containing air gaps. The method further includes depositing a silicon nitride film to seal the air gaps. Depositing the silicon nitride film includes providing gases from a showerhead into a process chamber. The showerhead and a wafer on a carrier hav...