US Patent Issued to NANYA TECHNOLOGY on Oct. 27 for "Method comprising an anti-reflection tri-layer stack for manufacturing a semiconductor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,900, issued on Oct. 27, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Method comprising an anti-reflection tri-layer stack for manufacturing a semiconductor structure" was invented by Tzu-Li Tseng (New Taipei City, Taiwan) and Zhi-Xuan Shen (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of this disclosure provide a method of manufacturing a semiconductor, including the following steps. A substrate comprising an active layer on the substrate is provided, and the substrate is defined with an array area and a peripheral area surrounding the array area. A first film layer is formed on the active ...