US Patent Issued to NANYA TECHNOLOGY on Oct. 20 for "Method of manufacturing semiconductor structure" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,767, issued on Oct. 20, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Method of manufacturing semiconductor structure" was invented by Jung Tzu Peng (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of this disclosure provide a method of manufacturing a semiconductor structure, including the following steps. A substrate with an active device layer on the substrate is provided. A stack film layer on the active device layer is formed. A resist platform layer on the stack film layer is formed. A blocking layer is deposited on the resist platform layer conformally. A photoresist layer is formed on t...