US Patent Issued to NANYA TECHNOLOGY on Oct. 20 for "Method for manufacturing semiconductor device including supporting layer to reinforce 3D memory structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,432, issued on Oct. 20, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Method for manufacturing semiconductor device including supporting layer to reinforce 3D memory structure" was invented by Shih-Fan Kuan (Taoyuan City, Taiwan), Hsu-Cheng Fan (Taoyuan City, Taiwan), Jiann-Jong Wang (New Taipei City, Taiwan), Chung-Hsin Lin (New Taipei City, Taiwan) and Yu-Ting Lin (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a substrate, a word line, a first capacitor, a second capacitor, a fi...