US Patent Issued to NANYA TECHNOLOGY on Nov. 3 for "Method of manufacturing semiconductor structure" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,737, issued on Nov. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Method of manufacturing semiconductor structure" was invented by Kuo-Hui Su (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a semiconductor structure and a manufacturing method of the semiconductor structure. A planar surface of a silicon pillar is provided. At least one first trench is created in a substrate. A conductive material is deposited to partially fill the first trench. An insulative piece is formed in the first trench and extends into the conductive material. An isolation material is deposited i...