US Patent Issued to NANYA TECHNOLOGY on Nov. 3 for "Memory device including recessed gate structure having high-k gate dielectric layer and method for preparing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,268, issued on Nov. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Memory device including recessed gate structure having high-k gate dielectric layer and method for preparing the same" was invented by Ying-Cheng Chuang (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first high-k gate dielectric layer disposed in a semiconductor substrate. A top surface of the first high-k gate dielectric layer is higher than a top surface of the semiconductor substrate. The memory device also includes a first metal gate electrode layer disposed over the first high-k gate dielectric layer. A lo...