US Patent Issued to NANYA TECHNOLOGY on May 26 for "Semiconductor device with recessed gate and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,857, issued on May 26, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor device with recessed gate and method for fabricating the same" was invented by Ying-Cheng Chuang (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a recessed gate dielectric layer inwardly positioned in the substrate and including a U-shaped cross-sectional profile; a recessed gate bottom conductive layer positioned on the recessed gate dielectric layer and including a vall...