US Patent Issued to NANYA TECHNOLOGY on May 26 for "Semiconductor device and method for manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,773, issued on May 26, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor device and method for manufacturing the same" was invented by Jhen-Yu Tsai (Kaohsiung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a substrate having a trench and a gate structure in the trench. The gate structure includes a lower gate electrode, an upper gate electrode disposed over the lower gate electrode, and a silicide layer contacting the upper gate electrode."

The patent was filed on Sept. 19, 2023, unde...