US Patent Issued to NANYA TECHNOLOGY on May 19 for "Manufacturing method of semiconductor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,129, issued on May 19, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Manufacturing method of semiconductor structure" was invented by Chiang-Lin Shih (New Taipei City, Taiwan), Hsueh-Han Lu (New Taipei City, Taiwan) and Yu-Ting Lin (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor structure is provided. A conductive layer is formed on a precursor memory structure. A target layer is formed on the conductive layer. A first photoresist with a first opening is formed on the target layer. A spacer is formed on sidewalls of the first opening. A second photoresist with a se...