US Patent Issued to NANYA TECHNOLOGY on May 12 for "Semiconductor device with spacer and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,402, issued on May 12, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor device with spacer and method for fabricating the same" was invented by Jhen-Yu Tsai (Kaohsiung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a buried conductive layer including a bottom portion positioned in the substrate, and a top portion positioned in the substrate and positioned on the bottom portion; and an in-recess spacer positioned in the substrate, surrounding the bott...