US Patent Issued to NANYA TECHNOLOGY on May 12 for "Method of forming semiconductor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,403, issued on May 12, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Method of forming semiconductor structure" was invented by Pei-Rou Jiang (Tainan City, Taiwan) and Chih-Ching Lin (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor structure includes forming a semiconductor layer and a metal layer on a first dielectric layer on a semiconductor substrate in sequence; forming a second dielectric layer on a portion of the metal layer; forming a BPSG layer on the second dielectric layer; etching the metal layer and the semiconductor layer; forming a first spacer layer on sidewal...