US Patent Issued to NANYA TECHNOLOGY on March 31 for "Semiconductor device having semiconductor channel layer and method of manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,439, issued on March 31, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor device having semiconductor channel layer and method of manufacturing the same" was invented by Hsih-Yang Chiu (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, a bit line, a semiconductor layer, and a word line. The bit line is disposed over the substrate. The semiconductor layer is disposed over the bit line. The word line abuts the semiconductor layer. The word line has a lower surface facing the substr...