US Patent Issued to NANYA TECHNOLOGY on March 31 for "Method of manufacturing semiconductor structure" (Taiwanese Inventor)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,669, issued on March 31, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Method of manufacturing semiconductor structure" was invented by Li Han Lin (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor structure includes the following steps. A bit line structure is formed over a substrate. A first spacer layer is formed on a first sidewall of the bit line structure. A second spacer layer is formed on a second sidewall of the first spacer layer. A third spacer layer is formed on a third sidewall of the second spacer layer. An oxidation process is performed on the second spa...