US Patent Issued to NANYA TECHNOLOGY on March 24 for "Semiconductor structure having conductive pad with protrusion and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,553, issued on March 24, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor structure having conductive pad with protrusion and manufacturing method thereof" was invented by Yi-Jen Lo (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a semiconductor structure having a conductive pad with a protrusion, and a manufacturing method of the semiconductor structure. The semiconductor structure includes a first die including a first substrate, a first dielectric layer over the first substrate, a first conductive pad at least partially exposed through the first dielectric l...