US Patent Issued to NANYA TECHNOLOGY on March 17 for "Semiconductor device having gate structure and method for manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,639, issued on March 17, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor device having gate structure and method for manufacturing the same" was invented by Chung-Peng Hao (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a first bit-line extending in a first direction and a first word-line extending in a second direction substantially perpendicular to the first direction. The semiconductor device also includes a first channel. The first bit-line and the first word-line ar...