US Patent Issued to NANYA TECHNOLOGY on June 30 for "Contact structure, semiconductor device with the same, and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,532, issued on June 30, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Contact structure, semiconductor device with the same, and method for fabricating the same" was invented by Ying-Cheng Chuang (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a cell contact structure, a semiconductor device, and a method for fabricating the semiconductor device. The cell contact structure includes a bottom contact layer positioned on a substrate and enclosed by a plurality of bit line structures and a plurality of partition layers; a liner layer positioned between the bottom contact layer a...