US Patent Issued to NANYA TECHNOLOGY on June 2 for "Dynamic random-access memory (DRAM) device" (Taiwanese Inventor)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,559, issued on June 2, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Dynamic random-access memory (DRAM) device" was invented by Chih-Jen Chen (Kaohsiung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A dynamic random-access memory (DRAM) device is provided. The DRAM device includes slave DRAM chips and a master DRAM chip. Each of the slave DRAM chips includes a slave reference voltage pad, a slave voltage sensor, a slave voltage pump and a slave fuse circuit. The slave voltage sensor senses a voltage value of a reference voltage on the slave reference voltage pad and provides a slave oscillating signal according to ...