US Patent Issued to NANYA TECHNOLOGY on July 21 for "Semiconductor structure for detecting vertical electrical leakage" (Taiwanese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,426, issued on July 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor structure for detecting vertical electrical leakage" was invented by Chun-Shun Huang (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor testing structure is provided. The semiconductor testing structure includes a substrate, a first metal layer, a dielectric structure, and a second metal layer. The first metal layer is disposed on the substrate and includes a plurality of fingers extending along a first direction. The dielectric structure is disposed on the first metal layer. The second metal layer is disposed on...