US Patent Issued to NANYA TECHNOLOGY on July 21 for "Semiconductor device with thickening layer and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,452, issued on July 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor device with thickening layer and method for fabricating the same" was invented by Chun-Heng Wu (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device and a method for fabricating the same. The semiconductor device includes a substrate; a word line structure including a word line dielectric layer in the substrate and including a U-shaped profile, a word line conductive layer on the word line dielectric layer and within the substrate, and a word line capping layer on the word li...