ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,184, issued on July 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Memory device with container-shaped electrode and method for fabricating the same" was invented by Yuan-Yuan Lin (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a memory device and a method for fabricating the memory device. The memory device includes a substrate; a landing area positioned on the substrate; a bottom electrode positioned on the landing area, wherein the bottom electrode has a container-shaped profile; a support layer positioned over the substrate and laterally surrounded the bottom elect...