ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,688, issued on Feb. 17, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).
"Method of manufacturing semiconductor device" was invented by Wei-Chuan Fang (New Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of manufacturing a semiconductor device. The method includes: providing a semiconductor structure, in which the semiconductor structure includes alternatively disposed first nitride portions and second nitride portions wrapping portions of an oxide layer, a dielectric layer disposed between one of the first nitride portions and one of the second nitride portions, a top nitride surrou...