US Patent Issued to NANYA TECHNOLOGY on Feb. 17 for "Method for fabricating a semiconductor device with a composite barrier structure" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,622, issued on Feb. 17, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method for fabricating a semiconductor device with a composite barrier structure" was invented by Wei-Chen Pan (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device with a composite barrier structure and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a first dielectric layer having a feature opening on a substrate; a composite barrier structure in the feature opening, wherein the composite barrier structure includes a barrier layer in the feature...