US Patent Issued to NANYA TECHNOLOGY on Aug. 25 for "Semiconductor structure and method of forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,779, issued on Aug. 25, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor structure and method of forming the same" was invented by Shih-Ting Huang (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor structure includes following steps. A substrate is provided. The substrate has an active region, an isolation structure adjacent to the active region, and a contact on the active region. A dielectric stack is formed on the substrate. A poly layer is formed on the dielectric stack. The poly layer and the dielectric stack are etched to form an opening to expose the cont...