US Patent Issued to NANYA TECHNOLOGY on Aug. 25 for "Semiconductor device and method of manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,146, issued on Aug. 25, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor device and method of manufacturing the same" was invented by Chun-Heng Wu (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a landing pad, a first nitride layer, a first oxide layer, a second nitride layer, a third nitride layer, an electrode layer, and a filling material. The landing pad, the first nitride layer, the first oxide layer, the second nitride layer, and the third nitride layer are sequentially formed. A trench runs through the third nitride layer, the second oxide layer, the second n...