US Patent Issued to NANYA TECHNOLOGY on Aug. 25 for "Memory device with tapered bit line contact and method for preparing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,737, issued on Aug. 25, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Memory device with tapered bit line contact and method for preparing the same" was invented by Chih-Wei Huang (Taoyuan City, Taiwan), Hsu-Cheng Fan (Taoyuan City, Taiwan) and Chih-Yu Yen (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a semiconductor substrate having an active region, and a word line extending across the active region. The memory device also includes a first source/drain region and a second source/drain region disposed in the active region and on opposite sides of the word line. The memory devic...