US Patent Issued to NANYA TECHNOLOGY on April 21 for "Semiconductor device structure with reduced critical dimension and method for preparing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,803, issued on April 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor device structure with reduced critical dimension and method for preparing the same" was invented by Kuo-Hui Su (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device structure and a method for preparing the semiconductor device structure. The semiconductor device structure includes a first conductive layer disposed over a semiconductor substrate; a first dielectric layer disposed over the first conductive layer; an energy-removable layer conformally deposited over the first die...