US Patent Issued to NANYA TECHNOLOGY on April 21 for "Semiconductor device having trench capacitors formed on channel structures and methods for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,531, issued on April 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor device having trench capacitors formed on channel structures and methods for manufacturing the same" was invented by Chiang-Lin Shih (New Taipei City, Taiwan) and Yu-Ting Lin (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a substrate, a first bit line disposed on the substrate and extending along a first direction, a first word line disposed on the first bit line and extending along a second direction perpendic...