US Patent Issued to NANYA TECHNOLOGY on April 21 for "Memory device with air gap and method for preparing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,534, issued on April 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Memory device with air gap and method for preparing the same" was invented by Chun-Heng Wu (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a bit line structure disposed over a semiconductor substrate, and a lower capacitor contact disposed over the semiconductor substrate and adjacent to the bit line structure. The memory device also includes a first nitride spacer and a second nitride spacer disposed between the bit line structure and the lower capacitor contact. The memory device further includes a capacitor di...