US Patent Issued to NANYA TECHNOLOGY on April 21 for "Memory device and noise suppression method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,153, issued on April 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Memory device and noise suppression method thereof" was invented by Wu-Der Yang (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and a noise suppression method thereof are provided. An input receiving circuit of a memory circuit receives a data strobe differential signal pair. A noise suppression circuit provides a noise suppression resistor connected between an input terminal of the input receiving circuit and a ground voltage during a write data strobe signal off period before a write preamble period."

The patent was fi...