US Patent Issued to NANYA TECHNOLOGY on April 21 for "Manufacturing method of semiconductor device" (Taiwanese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,765, issued on April 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Manufacturing method of semiconductor device" was invented by Yu Li Lin (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a semiconductor device includes depositing a first bilayer structure over a substrate, in which the first bilayer structure includes a silicon oxide layer and a silicon nitride layer over the silicon nitride layer; forming a first carbonaceous hard mask on the first bilayer structure; forming a second bilayer structure on the first carbonaceous hard mask; forming a mask stack of alternating ...