US Patent Issued to NANYA TECHNOLOGY on April 21 for "Hardmask structure for preparing semiconductor structure" (Taiwanese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,607,924, issued on April 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Hardmask structure for preparing semiconductor structure" was invented by Wei-Chuan Fang (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a hardmask structure for preparing a semiconductor structure. The hardmask structure includes a first ashable hardmask layer, a first anti-reflection coating, and a second ashable hardmask layer. The first anti-reflection coating is disposed on the first ashable hardmask layer. The second ashable hardmask layer is disposed on the first anti-reflection coating. A modulu...