US Patent Issued to NANYA TECHNOLOGY on April 14 for "Semiconductor structure having word line and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,462, issued on April 14, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor structure having word line and manufacturing method thereof" was invented by Chiang-Lin Shih (New Taipei City, Taiwan) and Yu-Ting Lin (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first dielectric layer, a second dielectric layer on the first dielectric layer, a capacitor structure in the first dielectric layer and the second dielectric layer, a third dielectric layer on the second dielectric layer, a word line, a channel structure, and a gate dielectric. The word line is located i...