US Patent Issued to NANYA TECHNOLOGY on April 14 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,711, issued on April 14, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Shing-Yih Shih (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes bonding a first wafer with a second wafer. The second wafer includes a substrate, an isolation structure in the substrate, a transistor on the substrate, and a interconnect structure over the second transistor. A first etching process is performed to form a first via opening and a second via opening in the substrate. The second via opening extend...