US Patent Issued to NANYA TECHNOLOGY on April 14 for "Memory device having ultra-lightly doped region and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,463, issued on April 14, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Memory device having ultra-lightly doped region and manufacturing method thereof" was invented by Chung-Lin Huang (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a memory device having an ultra-lightly doped region and a manufacturing method of the memory device. The memory device includes a semiconductor substrate including a word line extending into the semiconductor substrate, wherein the semiconductor substrate is defined with a source region, a drain region and an ultra-lightly doped region under the...