ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,490, issued on April 14, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).
"Memory device having a container-shaped electrode and method for fabricating the same" was invented by Yao-Hsiung Kung (Taoyuan City, Taiwan) and Chao-Wen Lay (New Taipei City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a memory device and a manufacturing method of the memory device. The memory device includes: a substrate, a landing area over the substrate, a bottom electrode over the landing area, and a high-k layer over the bottom electrode, wherein the bottom electrode includes a lower portion over the landing a...