US Patent Issued to Nanusens on Aug. 11 for "MEMS pressure sensor built using the beol metal layers of a solid-state semiconductor process" (Spanish Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,703,621, issued on Aug. 11, was assigned to Nanusens SL (Cerdanyola del Valles, Spain).

"MEMS pressure sensor built using the beol metal layers of a solid-state semiconductor process" was invented by Josep Montanya Silvestre (Cerdanyola del Valles, Spain).

According to the abstract* released by the U.S. Patent & Trademark Office: "A MEMS pressure sensor is provided having a membrane made with one of plurality of metal layers. A lid is positioned above the membrane and connected to a plurality of cavity walls at distal ends of the membrane. The lid includes an array of holes positioned on a region of the lid. A fixed metal electrode is positioned below the lid."

The patent was filed ...