US Patent Issued to Nano and Advanced Materials Institute on July 21 for "Milliwave RF device based on flexible and deformable materials with low dielectric constant and dielectric loss" (Chinese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,122, issued on July 21, was assigned to Nano and Advanced Materials Institute Ltd. (Hong Kong, Hong Kong).

"Milliwave RF device based on flexible and deformable materials with low dielectric constant and dielectric loss" was invented by Chi Ho Kwok (Hong Kong, Hong Kong), Wai Chung Li (Hong Kong, Hong Kong), Yan Liu (Hong Kong, Hong Kong) and Kal Lee (Hong Kong, Hong Kong).

According to the abstract* released by the U.S. Patent & Trademark Office: "A low loss flexible copper clad laminate (FCCL) for millimeter wave transmission with a dielectric layer comprising an electrospun nanofiber network of cyclized polyacrylonitrile, formed between conducting copper layers. The cyclized p...