US Patent Issued to NANJING UNIVERSITY on Sept. 1 for "Structure of two-dimensional material-based device having air-gap and method for preparing same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,207, issued on Sept. 1, was assigned to NANJING UNIVERSITY (Nanjing, China).

"Structure of two-dimensional material-based device having air-gap and method for preparing same" was invented by Xinran Wang (Nanjing, China), Dongxu Fan (Nanjing, China), Weisheng Li (Nanjing, China), Hao Qiu (Nanjing, China) and Yi Shi (Nanjing, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A structure of a two-dimensional material-based device having an air-gap and a method for preparing same comprises a substrate, a gate, an dielectric, a two-dimensional material-based film, and source and drain electrodes; the air-gap is formed between the two-dimensional mater...