US Patent Issued to NANJING UNIVERSITY on June 30 for "Tunable homojunction field effect device-based artificial synapse circuit and implementation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,670,368, issued on June 30, was assigned to NANJING UNIVERSITY (Nanjing, China).

"Tunable homojunction field effect device-based artificial synapse circuit and implementation method thereof" was invented by Feng Miao (Nanjing, China), Shijun Liang (Nanjing, China), Chen Pan (Nanjing, China), Chenyu Wang (Nanjing, China) and Pengfei Wang (Nanjing, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A tunable homojunction field effect device-based artificial synapse circuit includes a first tunable homojunction field effect device M1, a second tunable homojunction field effect device M2, a third tunable homojunction field effect device M3, and a capacito...