US Patent Issued to NANJING UNIVERSITY, Hefei National Laboratory on March 3 for "Silicon carbide detector and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,710, issued on March 3, was assigned to NANJING UNIVERSITY (Nanjing, China) and Hefei National Laboratory (Hefei, China).

"Silicon carbide detector and fabrication method thereof" was invented by Weizong Xu (Nanjing, China), Yue Guo (Nanjing, China), Hai Lu (Nanjing, China), Renjie Xu (Nanjing, China), Dong Zhou (Nanjing, China), Fangfang Ren (Nanjing, China) and Feng Zhou (Nanjing, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a silicon carbide detector and a fabrication method thereof. The silicon carbide detector includes: a silicon carbide substrate layer; and a silicon carbide base layer located on a side of the silicon carb...