ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,149, issued on July 14, was assigned to Murata Manufacturing Co. Ltd. (Kyoto, Japan).
"Backside deep trench capacitor and inductor structures" was invented by Shishir Ray (San Diego), Anil Kumar (San Diego), Sinan Goktepeli (Austin, Texas) and Kouassi Sebastien Kouassi (San Diego).
According to the abstract* released by the U.S. Patent & Trademark Office: "Single-chip solutions that result in high capacitance and/or inductance densities. Embodiments provide relatively large capacitance and/or inductance values for applications utilizing DC and/or sub-KHz signals up to RF signals. Embodiments may include an integrated circuit having a substrate having a backside, a substructure fo...